RUTHENIUM TARGET FOR HIGH VACUUM DEPOSITION PROCESS ON SEMI CONDUCTION WAFERS (NO BACKING PLATE). THE TARGET IS SEMI MANUFACTURED AND DESIGNED TO PUT DOWN A LAYER ON A SUBSTRATE SURFACE VIA A SPUTTERING PROCESS.
RUTHENIUM TARGET FOR HIGH VACUUM DEPOSITION PROCESS ON SEMI CONDUCTION WAFERS (NO BACKING PLATE). THE TARGET IS SEMI MANUFACTURED AND DESIGNED TO PUT DOWN A LAYER ON A SUBSTRATE SURFACE VIA A SPUTTERING PROCESS.
RUTHENIUM TARGET FOR HIGH VACUUM DEPOSITION PROCESS ON SEMI CONDUCTION WAFERS (NO BACKING PLATE). THE TARGET IS SEMI MANUFACTURED AND DESIGNED TO PUT DOWN A LAYER ON A SUBSTRATE SURFACE VIA A SPUTTERING PROCESS.
Classification justification
CLASSIFICATION IS DETERMINED ACCORDING TO GIRS 1 AND 6.