AN ION BEAM ETCH AND DEPOSITION SYSTEM USED FOR ION BEAM ETCHING, REACTIVE ION BEAM ETCHING, REACTIVE ION BEAM DEPOSITION, CHEMICALLY ASSISTED ION BEAM ETCHING, ION BEAM SPUTTER DEPOSITION, ION ASSISTED SPUTTER DEPOSITION. SPECIFICALLY DEVELOPED FOR HIGH QUALITY OPTICAL APPLICATIONS INCLUDING HIGH REFLECTIVE AND ANTI-REFLECTIVE COATINGS. COMES WITH STANDARD CHAMBER WHICH IS IDEAL FOR DEPOSITION ON UP TO 200MM WAFER SIZE AND WITH ETCH PROCESS OPTIMISED FOR UP TO 100MM WAFER SIZE. OR LARGE CHAMBER WHICH IS DESIGNED TO PROCESS WAFERS UP TO 200MM FOR BOTH ETCH AND DEPOSITION. SUBSTRATE ROTATION SPEED UP TO 20 RPM, TILT ANGLE -90 DEGREE HORIZONTAL TO 60 DEGREE FACING DOWN. PLATEN TEMPERATURE 5 TO 300 CENTIGRADE.

CLASSIFICATION HAS BEEN DETERMINED IN ACCORDANCE WITH THE FOLLOWING:- GENERAL INTERPRETATIVE RULES (GIR)S GIR 1 HAS BEEN USED TO CLASSIFY THIS PRODUCT BY THE TERMS OF HEADING 8486 - MACHINES AND APPARATUS OF A KIND USED SOLELY OR PRINCIPALLY FOR THE MANUFACTURE OF SEMICONDUCTOR BOULES OR WAFERS, SEMICONDUCTOR DEVICES, ELECTRONIC INTEGRATED CIRCUITS OR FLAT PANEL DISPLAYS; MACHINES AND APPARATUS SPECIFIED IN NOTE 9(C) TO THIS CHAPTER; PARTS AND ACCESSORIES GIR6 HAS BEEN USED TO CLASSIFY THE GOODS TO SUBHEADING LEVEL 848620 - MACHINES AND APPARATUS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES OR OF ELECTRONIC INTEGRATED CIRCUITS. CN CODE 84862000 - OTHER THAN MACHINE-TOOLS OPERATED BY ULTRASONIC PROCESSES ALSO CLASSIFIED IN ACCORDANCE WITH:- HARMONISED SYSTEM EXPLANATORY NOTES TO HEADING 8486.