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2E003

Materials Processing

Category 2Group EWassenaar Arrangement

Description

f. "Technology" for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note. Deposition (CVD) passages Ceramics (19) and Low- Silicides expansion glasses (14) Carbides Dielectric layers (15) Diamond Diamond-like carbon (17) Carbon-carbon, Silicides Ceramic and Carbides Metal "matrix" Refractory metals "composites" Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride Cemented tungsten Carbides carbide (16), Tungsten Silicon carbide (18) Mixtures thereof (4) Dielectric layers (15) Molybdenum and Dielectric layers (15) Molybdenum alloys Beryllium and Dielectric layers (15) Beryllium alloys Diamond Diamond-like carbon (17) Sensor window Dielectric layers (15) materials (9) Diamond Diamond-like carbon (17) Physical Vapour Deposition (TE-PVD) Deposition (PVD): Alloyed aluminides (2) Electron-Beam MCrAlX (5) (EB-PVD) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4) Ceramics (19) and Low- Dielectric layers (15) expansion glasses (14) Corrosion resistant MCrAlX (5) steel (7) Modified zirconia (12) Mixtures thereof (4) Carbon-carbon, Silicides Ceramic and Carbides Metal "matrix" Refractory metals "composites" Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten Carbides carbide (16), Tungsten Silicon carbide (18) Mixtures thereof (4) Dielectric layers (15) Molybdenum and Dielectric layers (15) Molybdenum alloys Beryllium and Dielectric layers (15) Beryllium alloys Borides Beryllium Sensor window Dielectric layers (15) materials (9) Titanium alloys (13) Borides Nitrides heating Physical Vapour expansion glasses (14) Diamond-like carbon (17) Deposition (PVD) (Ion Plating) Carbon-carbon, Dielectric layers (15) Ceramic and Metal "matrix" "composites" Cemented tungsten Dielectric layers (15) carbide (16), Silicon carbide Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window Dielectric layers (15) materials (9) Diamond-like carbon (17) Deposition (PVD): expansion glasses (14) Dielectric layers (15) "Laser" Vaporization Diamond-like carbon (17) Carbon-carbon, Dielectric layers (15) Ceramic and Metal "matrix" "composites" Cemented tungsten Dielectric layers (15) carbide (16), Silicon carbide Molybdenum and Dielectric layers (15) Molybdenum alloys Beryllium and Dielectric layers (15) Beryllium alloys Sensor window Dielectric layers (15) materials (9) Diamond-like carbon (17) Deposition (PVD): Alloyed aluminides (2) Cathodic Arc Discharge MCrAlX (5) Polymers (11) and Borides Organic "matrix" Carbides "composites" Nitrides Diamond-like carbon (17) (see A above for Ceramic and Carbides out-of-pack Metal "matrix" Mixtures thereof (4) cementation) (10) "composites" Titanium alloys (13) Silicides Aluminides Alloyed aluminides (2) Refractory metals Silicides and alloys (8) Oxides Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2) Aluminium alloys (6) MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4) Refractory metals Aluminides and alloys (8) Silicides Carbides steel (7) Modified zirconia (12) Mixtures thereof (4) Titanium alloys (13) Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester and alloys (8) Fused aluminides except for resistance heating elements Carbon-carbon, Silicides Ceramic and Carbides Metal "matrix" Mixtures thereof (4) "composites" Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4) Ceramics and Low- Silicides expansion glasses (14) Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17) Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides Carbon-carbon, Silicides Ceramic and Metal Carbides "matrix" "composites" Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten Carbides carbide (16), Tungsten Silicon carbide (18) Mixtures thereof (4) Dielectric layers (15) Boron nitride Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Borides Beryllium alloys Dielectric layers (15) Beryllium Sensor window Dielectric layers (15) materials (9) Diamond-like carbon (17) Refractory metals Aluminides and alloys (8) Silicides Oxides Carbides bearing steels Chromium Tantalum or Niobium (Columbium) Titanium alloys (13) Borides Nitrides Beryllium and Borides Beryllium alloys Cemented tungsten Carbides carbide (16) Nitrides magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones, medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5% beryllium. Processes specified in Column 1 of the Table are defined as follows: The addition of gases to the vacuum chamber during the coating process to synthesize compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating's deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes. Specific TE-PVD processes are as follows: The substrate and powder mixture is contained within a retort which is heated to between 1,030 K (757°C) and 1,375 K (1,102°C) for sufficient time to deposit the coating.

Sub-entries (12)

2E003.b

For Thermal Evaporation-Physical Vapour Deposition (TE-PVD):

2E003.g

For Ion Plating:

2E003.a

Not used;

2E003.b.1

"Technology" for the design of tools, dies or fixtures specially designed for any of the following processes:

2E003.b.1.a

"Superplastic forming";

2E003.b.1.b

"Diffusion bonding"; or

2E003.b.1.c

‘Direct-acting hydraulic pressing’;

2E003.b.2

Not used;

2E003.c

"Technology" for the "development" or "production" of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

2E003.d

Not used;

2E003.e

"Technology" for the "development" of integration "software" for incorporation of expert systems for advanced decision support of shop floor operations into "numerical control" units;

2E003.f

"Technology" for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note.

Product Examples

CVD deposition procedures for tungsten carbide coatings on Sandvik Coromant tools
Technical manuals for PVD deposition on Rolls-Royce turbine parts
Instructions for diamond layer deposition on Thorlabs optical windows
Ceramic coating processes on Mahle pistons
Surface treatment methods for FIBRO forming dies

Related CN customs codes (indicative)

82077031 69091900 84804900 85059080

Notes

-N.B. This Table should be read to specify the "technology" for a particular 'Coating Process' only when the Resultant Coating in column 3 is in a paragraph directly across from the relevant 'Substrate' under column 2. For example, Chemical Vapour Deposition (CVD) 'coating process' technical data are included for the application of 'silicides' to 'Carbon-carbon, Ceramic and Metal "matrix" "composites"' substrates, but are not included for the application of 'silicides' to 'Cemented tungsten carbide (16), Silicon carbide (18)' substrates. In the second case, the resultant coating is not listed in the paragraph under column 3 directly across from the paragraph under column 2 listing 'Cemented tungsten carbide (16), Silicon carbide (18)'.
-N.B.1. CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, Controlled Nucleation Thermal Deposition (CNTD), plasma enhanced or plasma assisted CVD processes.
-N.B.2. Pack denotes a substrate immersed in a powder mixture.
-N.B.3. The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture.
-N.B. This definition does not include random cathodic arc deposition with non-biased substrates.
-N.B.1. Low pressure means less than ambient atmospheric pressure.
-N.B.2. High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20°C) at 0.1 MPa.
-N.B.1. The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials.
-N.B.2. Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

Applicable Notes

General Technology Note (GTN)

The export of 'technology' which is 'required' for the 'development', 'production' or 'use' of items controlled in Categories 0 to 9 is controlled according to the provisions in each Category. 'Techno...

General Software Note (GSN)

The Lists do not control 'software' which is either: 1. Generally available to the public by being: a. Sold from stock at retail selling points, without restriction, by means of: (1) Over-the-counter ...

Category 2 - Materials Processing

This category covers machine tools and their controls, including numerically controlled (NC) machine tools with specific positioning or contouring accuracy thresholds. It also covers dimensional inspe...

Catch-All Clause - Article 4 of Regulation (EU) 2021/821

Article 4(1): An authorisation shall be required for the export of dual-use items not listed in Annex I if the exporter has been informed by the competent authority that the items in question are or m...

Cyber-Surveillance Catch-All - Article 5 of Regulation (EU) 2021/821

Article 5(1): An authorisation shall be required for the export of cyber-surveillance items not listed in Annex I if the exporter has been informed by the competent authority that the items in questio...

View official text on EUR-Lex

2E003

See also