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PHOTOMASK BLANK. A PLATE, COVERED WITH A FILM OF CHROMIUM AND COATED WITH A PHOTOSENSITIVE OR ELECTRON-SENSITIVE RESIN.THE PLATE/BLANK IS IMAGED USING LASER WRITING TOOLS WITH BESPOKE CIRCUIT DIAGRAM PATTERNS, THEN PROCESSED USING DEVELOP AND ETCHANT TYPE CHEMICALS TO MAKE A PHOTOMASK.PACKAGING OF THE BLANKS INVOLVES LIGHT SENSITIVE MULTICARRIERS WHICH SIT INSIDE CUSHIONED CARDBOARD CONTAINERS OFTEN SHIPPED ON PALLETS TO PROTECT FROM EXCESS VIBRATION. THESE BLANKS ARE AVAILABLE IN SIZES FROM 3 INCHES TO 14 INCHES. THEY CAN BE MADE FROM QUARTZ OR SODA LIME GLASS.

PHOTOMASK BLANK. A PLATE, COVERED WITH A FILM OF CHROMIUM AND COATED WITH A PHOTOSENSITIVE OR ELECTRON-SENSITIVE RESIN.THE PLATE/BLANK IS IMAGED USING LASER WRITING TOOLS WITH BESPOKE CIRCUIT DIAGRAM PATTERNS, THEN PROCESSED USING DEVELOP AND ETCHANT TYPE CHEMICALS TO MAKE A PHOTOMASK. PACKAGING OF THE BLANKS INVOLVES LIGHT SENSITIVE MULTICARRIERS WHICH SIT INSIDE CUSHIONED CARDBOARD CONTAINERS OFTEN SHIPPED ON PALLETS TO PROTECT FROM EXCESS VIBRATION. THE PLATES CAN BE MADE FROM QUARTZ OR SODA LIME GLASS.

EMULSIONS ON GLASS SUBSTRATES FOR HOLOGRAPHY. HOLOGRAPHIC PLATES IN TH E FLAT, SENSITISED, UNEXPOSED WITH ANY SIDE NOT EXCEEDING 255MM.

MASK BLANKS - HIGHLY POLISHED, HIGHLY FLAT GLASS OR SYNTHETIC QUARTZ SUBSTRATE, COATED WITH A THIN FILM OF CHROMIUM OR OTHER ABSORBING MATERIAL AND A PHOTORESIST OR ELECTRON-BEAM RESIST. THE RESIST IS SENSITISED BY UV OR ELECTRON-BEAM RADIATION IN PATTERNS RELATING TO INTEGRATED CIRCUIT DESIGN. SENSITISED RESIST IS DEVELOPED AND THE REVEALED FILM IS ETCHED. AFTER THE REMAINING RESIST IS REMOVED, A HIGH CONTRAST INTEGRATED CIRCUIT PATTERN OF FILM AND TRANSPARENT SUBSTRATE REMAINS. THE RESULTANT PHOTO-MASK IS USED FOR THE PRODUCTION OF SEMICONDUCTOR AND SIMILAR ELECTRONIC DEVICES

MASK BLANKS - HIGHLY POLISHED, HIGHLY FLAT GLASS OR SYNTHETIC QUARTZ SUBSTRATE COATED WITH A THIN FILM OF CHROMIUM (OR SIMILAR OPAQUE MATERIAL) AND A PHOTO RESIST OR ELECTRON BEAM RESIST. THE RESIST IS SENSITISED BY U.V OR ELECTRON BEAM RADIATION IN PATTERNS RELATING TO INTEGRATED CIRCUIT DESIGNS, SENSITISED RESIST IS DEVELOPED AND THE REVEALED CHROMIUM IS ETCHED. AFTER THE REMAINING RESIST IS REMOVED A HIGH CONTRAST INTEGRATED CIRCUIT PATTERN OF CHROME AND TRANSPARENT SUBSTRATE REMAINS. THE RESULTANT PHOTO-MASK IS USED FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES.