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PRODUCT IS USED AS A DRY LUBRICANT FOR A HIGH HEAT PROCESS IN ALUMINIUM PANEL FORMING THE PRODUCT IS IMMEDIATELY WASHED OFF ONCE THE PROCESS IS COMPLETED. IT GIVES NO ADDED VALUE TO THE FINISHED PRODUCT.

A POWDER USED TO PRODUCE DENTAL MOULDS USING THE LOST WAX PROCESS FOR THE PRODUCTION OF DENTAL CROWNS. THE POWDER CONTAINS SILICON DIOXIDE (QUARTZ POWDER), CRYSTALLINE SILICA - CRISTOBALITE, MAGNESIUM OXIDE AND AMMONIUM PHOSPHATE AND IS MIXED WITH A LIQUID TO PRODUCE A MOULD OF A DENTAL CROWN MADE OF WAX. THE WAX IS THEN BURNT OUT LEAVING A CAVITY, WHICH IS THEN FILLED WITH HEATED, PLIABLE PORCELAIN WHICH IS FORCED INTO THE MOULD UNDER A VACUUM TO PRODUCE A FINISHED DENTAL CROWN.

DOPED SILICON (SILICON IS DOPED WITH CARBITE SiC) IN THE FORM OF A TARGET FOR THE DEPOSITION ON SEMI CONDUCTOR WAFERS, APPROXIMATE DIAMETER 330MM, THICKNESS 3MM, DENSITY 2.3 - 2.7 G/CM3, PRODUCT IS IN DISC FORM.

DOPED SILICON DISKS MACHINED INTO A PARTICULAR SHAPE FOR USE IN THE MANUFACTURE OF CDs AND DVDs

INDIUM PHOSPHIDE SUBSTRATES (WAFER FORM). THE SUBSTRATES ARE GROWN FROM A SINGLE CRYSTAL CYLINDER OF INDIUM PHOSPHIDE MATERIAL WHICH IS THEN CUT INTO SLICES (SUBSTRATES) AND THE SLICES ARE POLISHED. THE COMPOUND IS DOPED WITH IRON OR SULPHUR. EPITAXIAL LAYERS WILL BE GROWN ON THE SUBSTRATES TO CREATE EPITAXIAL WAFERS FOR USE IN THE ELECTRONICS INDUSTRY.