0 results for "3818"
DOPED SILICON (SILICON IS DOPED WITH CARBITE SiC) IN THE FORM OF A TARGET FOR THE DEPOSITION ON SEMI CONDUCTOR WAFERS, APPROXIMATE DIAMETER 330MM, THICKNESS 3MM, DENSITY 2.3 - 2.7 G/CM3, PRODUCT IS IN DISC FORM.
DOPED SILICON DISKS MACHINED INTO A PARTICULAR SHAPE FOR USE IN THE MANUFACTURE OF CDs AND DVDs
INDIUM PHOSPHIDE SUBSTRATES (WAFER FORM). THE SUBSTRATES ARE GROWN FROM A SINGLE CRYSTAL CYLINDER OF INDIUM PHOSPHIDE MATERIAL WHICH IS THEN CUT INTO SLICES (SUBSTRATES) AND THE SLICES ARE POLISHED. THE COMPOUND IS DOPED WITH IRON OR SULPHUR. EPITAXIAL LAYERS WILL BE GROWN ON THE SUBSTRATES TO CREATE EPITAXIAL WAFERS FOR USE IN THE ELECTRONICS INDUSTRY.