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THIS SYSTEM IS CONFIGURED FOR ION BEAM ETCH (IBE) ONLY AND IS SUPPLIED WITH THE FOLLOWING CONFIGURATION; STAINLESS STEEL PROCESS CHAMBER WITH EXCHANGEABLE LINERS SYSTEM CONSOLE WATER COOLED SUBSTRATE HOLDER AND HELIUM "BACKSIDE COOLING" COMPUTER CONTROL ION SOURCE / OPTICS VACUUM MEASUREMENT GAS SUPPLY PUMPING SYSTEM TRANSFER STATION VACUUM CASSETTE STATION SIMS. THE SYSTEM IS CONFIGURED TO PERFORM THE FOLLOWING PROCESSES: ETCHING OF SIO2, AU, CR, RU, TI, PT, CU, TIW, CO, AG, NI, TINI, TA, AL2O3, TAN, PD, CAF2, FE, MGO, PZT, IEMN, CUN, NIFE, CR2O3 & CMT AND IS CONFIGURED FOR THE ETCHING OF NEW TYPES OF SENSORS INCLUDING FORCE AND PRESSURE SENSORS. FOR MEDICAL AND SCIENTIFIC APPLICATIONS.

REACTOR SYSTEM FOR GROWTH OF CARBON BASED NANO MATERIALS. THE SYSTEM IS COMPUTER CONTROLLED AND INCLUDES AS HEATER, SHOWERHEAD, MASS FLOW CONTROLLER AND POWER SUPPLY. SAMPLES ARE PLACED ON THE HEATER AND ARE EXPOSED TO GASES DISTRIBUTED VIA THE SHOWERHEAD. DURING GROWTH A HIGH VOLTAGE IS ALSO APPLIED BETWEEN THE HEATER AND THE GAS SHOWERHEAD TO FORM A PLASMA. THE TEMPERATURE OF THE SAMPLES IS DETERMINED EITHER BY CONTACT THERMOCOUPLE OR BY PYROMETRY. THE FLOW OF THE GASES, TYPICALLY CONSISTING OF CARBON CONTAINING GAS, REDUCING GAS AND AN INERT GAS IS CONTROLLED BY MASS FLOW CONTROLLERS. A POWER SUPPLY IS USED FOR THE PLASMA. THE SYSTEM IS USED FOR RESEARCH AND IN INDUSTRY.

A METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION REACTOR BASED UPON CLOSED COUPLED SHOWERHEAD CONCEPT. INITIALLY DEVELOPED FOR GROWTH OF INP AND GAAS BASED MATERIALS. IT PROVIDES SUSCEPTOR- SUBSTRATE OPTIONSFOR BOTJ INP (INDIUM PHOSPHIDE) AND GAAS GAN (GALIUM NITRATE) THE REACTOR DESIGN IS BASED ON THE STAGNANT POINT CONCEPT. REAGENTS ENTER THE STAINLES STEEL, QUARTZ LINED REACTOR CHAMBER THROUGH A WATER COOLED SHOWERHEAD, CLOSE TO THE SAPPHIRRE SUBSTRATES. THE SHOWERHEAD HAS SEPARATE INJECTION FOR NH3 AND TMGA. THE SUBSTRATES ARE PLACED ON THE TOP SURFACE OF A ROTATING SUSCEPTOR WHICH IS RESISTIVELY HEATED. THE THREE ZONE HEATER ENABLES AN APPROPRIATE TEMPRATURE PROFILE TO BE SET UP ACROSS THE SUSCEPTOR FOR OPTIMISM OF UNIFORMITY. THE PROFILE IS MONITORED THROUGH OPTICAL PYROMETER PORTS THROUGH THE SHOWERHEAD.GROWTH OF TEMPERATURE IS CONTROLLED FROM A TRANSDUCER. GASES PASS AROUND SUSCEPTOR , PASSING THROUGH A FILTER TO PROTECT VACUUM FROM CONTAMINATION. REMOTELY OPERATED VIA COMPUTER . THIS PRODUCT IS A SYSTEM USED FOR DEPOSIT SEMI CONDUCTOR MATERIAL ONTO SUBSTRATES , NORMALLY DISCS OF CHRISTALLINE MATERIALS.

CLEAN KIT FOR SPUTTERING MACHINE. THE KIT IS COMPRISED OF THE FOLLOWING COMPONENTS: A LOWER SHIELD, INNER SHIELD, UPPER SHIELD, COVER RING, DEPOSITION RING, SHUTTER DISK, INNER SHIELD CLAMP AND LOWER SHIELD CLAMP. THE COMPONENTS ARE STACKED/INTERMESHED ON TOP OF EACH OTHER. THEY ENCAPSULATE THE SEMICONDUCTOR WAFER FROM THE WALLS OF THE HIGH VACUUM CHAMBER OF THE SPUTTERING MACHINE, ALLOWING CONTROLLED SPUTTERING TO TAKE PLACE AND PREVENTING METAL DEPOSITION ON THE CHAMBER WALLS. THE COMPONENTS ARE PRESENTED TOGETHER, UNASSEMBLED, IN A CASE.

BEARING RACE ASSEMBLY USED IN A DRIVE SHAFT. CONSITING OF A BEARING CUP, THRUST WASHER, ROLLER BEARING, SEAL PRELUBE AND A JOURNAL SLINGER. ITEM DESINGED SOLELY AND PRINCIPALLY FOR USE IN HIGHWAY MACHINES AND HEAVY DUTY INDUSTRIAL MACHINERY OF HEADING 8430.