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THIS IS AN ION BEAM ETCH AND DEPOSITION SYSTEM USED FOR ION BEAM ETCHING, REACTIVE ION BEAM ETCHING, REACTIVE ION BEAM DEPOSITION, CHEMICALLY ASSISTED ION BEAM ETCHING, ION BEAM SPUTTER DEPOSITION, ION ASSISTED SPUTTER DEPOSITION. SPECIFICALLY DEVELOPED FOR HIGH QUALITY OPTICAL APPLICATIONS INCLUDING HIGH REFLECTIVE AND ANTI REFLECTIVE COATINGS COMES WITH STANDARD CHAMBER WHICH IS IDEAL FOR DEPOSITION ON UP TO 200MM WAFER SIZE AND WITH ETCH PROCESS OPTIMISED FOR UP TO 100MM WAFER SIZE. OR LARGE CHAMBER WHICH IS DESIGNED TO PROCESS WAFERS UP TO 200MM FOR BOTH ETCH AND DEPOSITION.

A 5kW SINGLE OUTPUT, 5kW DUAL OUTPUT AND 10 kW SINGLE OUTPUT DC POWER SUPPLY USED IN THE MANUFACTURE OF SEMICONDUCTORS. UNDER THE SPUTTERING PROCESS A SUBSTRATE (SILICON) IS BOMBARDED WITH IONS IN A VACUUM FLASK CONTAINING PLASMA. THE PLASMA IS A COMBINATION OF AN ELECTRICAL CURRENT AND AN INERT GAS. THIS PRODUCT PRODUCES THE ELECTRICAL CURRENT FOR THAT PURPOSE. THEY ARE DESIGNED FOR THIS PURPOSE ALONE. OUTPUT POWER: VOLTAGE RANGE - 325 TO 650 VDC; OPTIONAL 325 TO 800 VDC OUTPUT (WIDE Z). FREQUENCY - 5 TO 350 kHz, VARIABLE. REVERSE VOLTAGE - 10% OF OPERATING VOLTAGE (JUST PRIOR TO REVERSAL). IGNITION CAPABILITY - 1500 VDC MAX. 1350 VDC TYPICAL. INPUT POWER: AC LINE VOLTAGE - 200/208 OR 400 OR 480VAC. DIMENSIONS (INCLUDING CONNECTORS) - 133MM (H) x 483MM (W) x 675MM (D).

A 3-kW DC POWER SUPPLY USED IN THE MANUFACTURE OF SEMICONDUCTORS. UNDER THE SPUTTERING PROCESS A SUBSTRATE (SILICON) IS BOMBARDED WITH IONS IN A VACUUM FLASK CONTAINING PLASMA. THE PLASMA IS A COMBINATION OF AN ELECTRICAL CURRENT AND AN INERT GAS. THIS PRODUCT PRODUCES THE ELECTRICAL CURRENT FOR THAT PURPOSE. THEY ARE DESIGNED FOR THIS PURPOSE ALONE. OUTPUT POWER - 3 kW. OUTPUT VOLTAGE - 370 TO 1000 VDC. INPUT POWER: LINE VOLTAGE - 400 VAC 10%; 3 oHI, 4 WIRE, 50 TO 60 Hz, NO NEUTRAL. DIMENSIONS - 87 MM (H) x 216 MM (W) x 517 MM (D)

A 8-, 10-, AND 15-kW DC POWER SUPPLY USED IN THE MANUFACTURE OF SEMICONDUCTORS. UNDER THE SPUTTERING PROCESS A SUBSTRATE (SILICON) IS BOMBARDED WITH IONS IN A VACUUM FLASK CONTAINING PLASMA. THE PLASMA IS A COMBINATION OF AN ELECTRICAL CURRENT AND AN INERT GAS. THIS PRODUCT PRODUCES THE ELECTRICAL CURRENT FOR THAT PURPOSE. THEY ARE DESIGNED FOR THIS PURPOSE ALONE. OUTPUT POWER: 8, 10 AND 15 kW. OUTPUT VOLTAGE - 400 TO 800 VDC FULL-POWER OUTPUT. INPUT POWER: LINE VOLTAGE - 400 VAC 10%; 3 oHI, 4 WIRE, 50 TO 60 Hz, NO NEUTRAL. DIMENSIONS - 8 AND 10 kW: 132.3 MM (H) x 215.90 MM (W) x 499.70 MM (D). 15 kW: 132.3 MM (H) x 215.90 MM (W) x 575.90 MM (D)

WAFER STEPPER. THE PRODUCT IS AN EXPOSURE MACHINE USED TO EXPOSE A PATTERN ON A WAFER BY SHINING A LIGHT THROUGH THE RETICLE (GLASS PLATE CONTAINING PATTERN). AS THE ENTIRE WAFER CANNOT BE ACCURATELY EXPOSED IN ONE PROCEDURE THE STEPPER EXPOSES AN SMALL AREA AND THEN REPEATS THE STEPS UNTIL COMPLETE.