Electronics
b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0.01 µcoulomb/mm2 or better;
| Reference | Parameter | Threshold |
|---|---|---|
| 3C002.a.1 | ed) for use at wavelengths less than 193 nm but equal to or | > 15 nm |
| 3C002.a.1 | ted (optimised) for use at wavelengths less than 193 nm but | >= 15 nm |
| 3C002.a.1 | ositive resists adjusted (optimised) for use at wavelengths | < 193 nm |
| 3C002.a.2 | sted (optimised) for use at wavelengths less than 15 nm but | > 1 nm |
| 3C002.a.2 | Resists adjusted (optimised) for use at wavelengths | < 15 nm |
3C002.cNot used since 2012
3C002.dAll resists optimised for surface imaging technologies;
3C002.eAll resists designed or optimised for use with imprint lithography equipment specified in 3.B.1.f.2. that use either a thermal or photo-curable process.
3C002.aResists designed for semiconductor lithography as follows:
3C002.a.1Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
3C002.a.2Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;
3C002.bAll resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;
Decontrol note
Les résists standards pour applications industrielles classiques, non optimisés pour les procédés avancés ou pour la lithographie à très haute résolution, peuvent être exemptés.
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