Customs Search

ESCALATOR STEP LADDER CHAIN, THE COMPONENT IS MADE OF STEEL BARS LINKED TO POLYURETHANE ROLLERS. THE COMPONENT IS FITTED INSIDE THE TRUSS OF THE ESCALATOR WHICH CONNECTS TO THE STEPS OF THE ESCALATOR WHICH DRIVES THE STEPS AROUND THE ESCALATOR. THE PRODUCT IS SPECIFIC TO THIS APPLICATION AND IS FOR THE SOLE PURPOSE OF THE 'OTIS' MODEL OF ESCALATORS ONLY.

THIS SYSTEM IS CONFIGURED FOR ION BEAM ETCH (IBE) ONLY AND IS SUPPLIED WITH THE FOLLOWING CONFIGURATION; STAINLESS STEEL PROCESS CHAMBER WITH EXCHANGEABLE LINERS SYSTEM CONSOLE WATER COOLED SUBSTRATE HOLDER AND HELIUM "BACKSIDE COOLING" COMPUTER CONTROL ION SOURCE / OPTICS VACUUM MEASUREMENT GAS SUPPLY PUMPING SYSTEM TRANSFER STATION VACUUM CASSETTE STATION SIMS. THE SYSTEM IS CONFIGURED TO PERFORM THE FOLLOWING PROCESSES: ETCHING OF SIO2, AU, CR, RU, TI, PT, CU, TIW, CO, AG, NI, TINI, TA, AL2O3, TAN, PD, CAF2, FE, MGO, PZT, IEMN, CUN, NIFE, CR2O3 & CMT AND IS CONFIGURED FOR THE ETCHING OF NEW TYPES OF SENSORS INCLUDING FORCE AND PRESSURE SENSORS. FOR MEDICAL AND SCIENTIFIC APPLICATIONS.

HIGH SPEED STRAIGHT SIDE DOUBLE CRANK PRECISION PUNCH SHELL PRESS HIGH PERFORMANCE STAMPING PRESS WITH PERFECTED MASS BALANCING SYSTEM AND ADJUSTABLE STROKE. PRESS FORCE 1250KN. SPEED RANGING FROM 100 TO 850 SPM. MODULAR DESIGN. INTEGRATED SAFETY CONTROL. THE PRESS IS NEITHER HYDRAULICALLY POWERED NOR NUMERICALLY CONTROLLED. FUNCION OF THE SHELL PRESS PUNCHES OUT THE ALUMINIUM ENDS MINUS THE PULL RING. A COIL OF ALUMINIUM IS FED INTO THE PRESS. THE DIE SET IN THE PRESS THEN PUNCHES OUT 26 ENDS PER STROKE. THE PRESS NORMALLY RUNS AT AROUND 300 STROKES PER MINUTE. THE BLANK SHELLS THEN MOVE ON TO THE CONVERSION PRESS WHERE THE TAB IS INSERTED INTO THE SHELL. (NOT THE SUBJECT OF THIS BTI.)

REACTOR SYSTEM FOR GROWTH OF CARBON BASED NANO MATERIALS. THE SYSTEM IS COMPUTER CONTROLLED AND INCLUDES AS HEATER, SHOWERHEAD, MASS FLOW CONTROLLER AND POWER SUPPLY. SAMPLES ARE PLACED ON THE HEATER AND ARE EXPOSED TO GASES DISTRIBUTED VIA THE SHOWERHEAD. DURING GROWTH A HIGH VOLTAGE IS ALSO APPLIED BETWEEN THE HEATER AND THE GAS SHOWERHEAD TO FORM A PLASMA. THE TEMPERATURE OF THE SAMPLES IS DETERMINED EITHER BY CONTACT THERMOCOUPLE OR BY PYROMETRY. THE FLOW OF THE GASES, TYPICALLY CONSISTING OF CARBON CONTAINING GAS, REDUCING GAS AND AN INERT GAS IS CONTROLLED BY MASS FLOW CONTROLLERS. A POWER SUPPLY IS USED FOR THE PLASMA. THE SYSTEM IS USED FOR RESEARCH AND IN INDUSTRY.

A METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION REACTOR BASED UPON CLOSED COUPLED SHOWERHEAD CONCEPT. INITIALLY DEVELOPED FOR GROWTH OF INP AND GAAS BASED MATERIALS. IT PROVIDES SUSCEPTOR- SUBSTRATE OPTIONSFOR BOTJ INP (INDIUM PHOSPHIDE) AND GAAS GAN (GALIUM NITRATE) THE REACTOR DESIGN IS BASED ON THE STAGNANT POINT CONCEPT. REAGENTS ENTER THE STAINLES STEEL, QUARTZ LINED REACTOR CHAMBER THROUGH A WATER COOLED SHOWERHEAD, CLOSE TO THE SAPPHIRRE SUBSTRATES. THE SHOWERHEAD HAS SEPARATE INJECTION FOR NH3 AND TMGA. THE SUBSTRATES ARE PLACED ON THE TOP SURFACE OF A ROTATING SUSCEPTOR WHICH IS RESISTIVELY HEATED. THE THREE ZONE HEATER ENABLES AN APPROPRIATE TEMPRATURE PROFILE TO BE SET UP ACROSS THE SUSCEPTOR FOR OPTIMISM OF UNIFORMITY. THE PROFILE IS MONITORED THROUGH OPTICAL PYROMETER PORTS THROUGH THE SHOWERHEAD.GROWTH OF TEMPERATURE IS CONTROLLED FROM A TRANSDUCER. GASES PASS AROUND SUSCEPTOR , PASSING THROUGH A FILTER TO PROTECT VACUUM FROM CONTAMINATION. REMOTELY OPERATED VIA COMPUTER . THIS PRODUCT IS A SYSTEM USED FOR DEPOSIT SEMI CONDUCTOR MATERIAL ONTO SUBSTRATES , NORMALLY DISCS OF CHRISTALLINE MATERIALS.