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PYROPEN HOT AIR GUN. IGNITES WITH THE PUSH OF A BUTTON. LIGHTWEIGHT AND COMPLETELY PORTABLE. STURDY METAL TANKS HOLDS ENOUGH GAS FOR THREE HOURS. DOES NOT REQUIRE CORDS, BATTERIES OR CARTRIDGES. TEMPERATURE ADJUSTS FROM 482 DEGREES F- 932 DEGREES F/250DEGREES C - 500 DEGREES C. 14 SOLDERING TIP COMBINATIONS AVAILABLE.

SPUTTERING/THERMAL DEPOSITION SYSTEM. IN THE FORM OF A MODULAR MACHINE SYSTEM CONSISTING OF VACUUM COATING CHAMBERS, VACUUM PUMPS, OPTIONAL LOCK CHAMBER AND SUBSTRATE TRANSFER HANDLING SYSTEM WITH SUBSTRATE AND TARGET HOLDERS. IT HAS THERMAL OR ELECTRON BEAM EVAPORATION WITH ALTERNATING CURRENT OR DIRECT CURRENT GENERATOR OR MAGNETRON SPUTTERING PLASMA SOURCES WITH HIGH FREQUENCY AND/OR DIRECT CURRENT GENERATOR. THERE IS AN OPTIONAL HEATING DEVICE, PROCESS GAS SUPPLY AND DISTRIBUTION SYSTEM FOR ASSEMBLY AND SYSTEM CONTROL. USED PREDOMINANTLY FOR THE GENERATION OF DEFINED THIN LAYERS ON SEMICONDUCTOR WAFERS OR SUBSTRATES BY DEPOSITION OF METALS, ALLOYS, ORGANICS, DIELECTRIC COMPOUNDS OR MIXTURES IN ULTRA/HIGH VACUUM BY THE PVD METHOD.

AN ION BEAM ETCH AND DEPOSITION SYSTEM USED FOR ION BEAM ETCHING, REACTIVE ION BEAM ETCHING, REACTIVE ION BEAM DEPOSITION, CHEMICALLY ASSISTED ION BEAM ETCHING, ION BEAM SPUTTER DEPOSITION, ION ASSISTED SPUTTER DEPOSITION. SPECIFICALLY DEVELOPED FOR HIGH QUALITY OPTICAL APPLICATIONS INCLUDING HIGH REFLECTIVE AND ANTI-REFLECTIVE COATINGS. COMES WITH STANDARD CHAMBER WHICH IS IDEAL FOR DEPOSITION ON UP TO 200MM WAFER SIZE AND WITH ETCH PROCESS OPTIMISED FOR UP TO 100MM WAFER SIZE. OR LARGE CHAMBER WHICH IS DESIGNED TO PROCESS WAFERS UP TO 200MM FOR BOTH ETCH AND DEPOSITION. SUBSTRATE ROTATION SPEED UP TO 20 RPM, TILT ANGLE -90 DEGREE HORIZONTAL TO 60 DEGREE FACING DOWN. PLATEN TEMPERATURE 5 TO 300 CENTIGRADE.

THIS SYSTEM IS CONFIGURED FOR ION BEAM ETCH (IBE) ONLY AND IS SUPPLIED WITH THE FOLLOWING CONFIGURATION; STAINLESS STEEL PROCESS CHAMBER WITH EXCHANGEABLE LINERS SYSTEM CONSOLE WATER COOLED SUBSTRATE HOLDER AND HELIUM "BACKSIDE COOLING" COMPUTER CONTROL ION SOURCE / OPTICS VACUUM MEASUREMENT GAS SUPPLY PUMPING SYSTEM TRANSFER STATION VACUUM CASSETTE STATION SIMS. THE SYSTEM IS CONFIGURED TO PERFORM THE FOLLOWING PROCESSES: ETCHING OF SIO2, AU, CR, RU, TI, PT, CU, TIW, CO, AG, NI, TINI, TA, AL2O3, TAN, PD, CAF2, FE, MGO, PZT, IEMN, CUN, NIFE, CR2O3 & CMT AND IS CONFIGURED FOR THE ETCHING OF NEW TYPES OF SENSORS INCLUDING FORCE AND PRESSURE SENSORS. FOR MEDICAL AND SCIENTIFIC APPLICATIONS.

REACTOR SYSTEM FOR GROWTH OF CARBON BASED NANO MATERIALS. THE SYSTEM IS COMPUTER CONTROLLED AND INCLUDES AS HEATER, SHOWERHEAD, MASS FLOW CONTROLLER AND POWER SUPPLY. SAMPLES ARE PLACED ON THE HEATER AND ARE EXPOSED TO GASES DISTRIBUTED VIA THE SHOWERHEAD. DURING GROWTH A HIGH VOLTAGE IS ALSO APPLIED BETWEEN THE HEATER AND THE GAS SHOWERHEAD TO FORM A PLASMA. THE TEMPERATURE OF THE SAMPLES IS DETERMINED EITHER BY CONTACT THERMOCOUPLE OR BY PYROMETRY. THE FLOW OF THE GASES, TYPICALLY CONSISTING OF CARBON CONTAINING GAS, REDUCING GAS AND AN INERT GAS IS CONTROLLED BY MASS FLOW CONTROLLERS. A POWER SUPPLY IS USED FOR THE PLASMA. THE SYSTEM IS USED FOR RESEARCH AND IN INDUSTRY.