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A VACUUM ELEVATOR, USED IN THE DELIVERY SYSTEM OF A PLASMA ETCHING DEVICE FOR THE PRODUCTION OF SILICON WAFERS. THE ELEVATOR TRANSPORTS WAFERS FRP, 4 TO 12 INCHES FROM THE CASETTE WHERE THE WAFERS ARE STORED, TO THE PROCESSING AREA BY WAY OF VACUUM ELEVATION. ANY TYPE OF MATERIAL CAN BE HANDLED INCLUDING SILICON, GALLIUM ARSENIDE AND FLAT PANEL DISPLAYS. ADDITIONAL FEATURES: PRECISE TO 0.001 INCH; VACUUM COMPATIBLE; ZERO BACKLASH; STAINLESS STEEL BELLOWS SEAL; FAST 1 INCH PER SECOND SPEED; DRIVE TO ANY POSITION; SERIAL PORT FOR EXTERNAL CONTROL.

Een zogenoemde werkstukhouder met -volgens opgave- onder andere de volgende uiterlijke en technische kenmerken: - in de verschijningsvorm van een grijze ring; - wordt gebruikt voor het positioneren en het op de plek houden van een wafer tijdens het productieproces; - siliciumcarbide; - de ring heeft een buiten- en binnendiameter van respectievelijk 23,6 en 19,6 cm.

CLEAN KIT FOR SPUTTERING MACHINE. THE KIT IS COMPRISED OF THE FOLLOWING COMPONENTS: A LOWER SHIELD, INNER SHIELD, UPPER SHIELD, COVER RING, DEPOSITION RING, SHUTTER DISK, INNER SHIELD CLAMP AND LOWER SHIELD CLAMP. THE COMPONENTS ARE STACKED/INTERMESHED ON TOP OF EACH OTHER. THEY ENCAPSULATE THE SEMICONDUCTOR WAFER FROM THE WALLS OF THE HIGH VACUUM CHAMBER OF THE SPUTTERING MACHINE, ALLOWING CONTROLLED SPUTTERING TO TAKE PLACE AND PREVENTING METAL DEPOSITION ON THE CHAMBER WALLS. THE COMPONENTS ARE PRESENTED TOGETHER, UNASSEMBLED, IN A CASE.

SPUTTERING/THERMAL DEPOSITION SYSTEM. IN THE FORM OF A MODULAR MACHINE SYSTEM CONSISTING OF VACUUM COATING CHAMBERS, VACUUM PUMPS, OPTIONAL LOCK CHAMBER AND SUBSTRATE TRANSFER HANDLING SYSTEM WITH SUBSTRATE AND TARGET HOLDERS. IT HAS THERMAL OR ELECTRON BEAM EVAPORATION WITH ALTERNATING CURRENT OR DIRECT CURRENT GENERATOR OR MAGNETRON SPUTTERING PLASMA SOURCES WITH HIGH FREQUENCY AND/OR DIRECT CURRENT GENERATOR. THERE IS AN OPTIONAL HEATING DEVICE, PROCESS GAS SUPPLY AND DISTRIBUTION SYSTEM FOR ASSEMBLY AND SYSTEM CONTROL. USED PREDOMINANTLY FOR THE GENERATION OF DEFINED THIN LAYERS ON SEMICONDUCTOR WAFERS OR SUBSTRATES BY DEPOSITION OF METALS, ALLOYS, ORGANICS, DIELECTRIC COMPOUNDS OR MIXTURES IN ULTRA/HIGH VACUUM BY THE PVD METHOD.

AN ION BEAM ETCH AND DEPOSITION SYSTEM USED FOR ION BEAM ETCHING, REACTIVE ION BEAM ETCHING, REACTIVE ION BEAM DEPOSITION, CHEMICALLY ASSISTED ION BEAM ETCHING, ION BEAM SPUTTER DEPOSITION, ION ASSISTED SPUTTER DEPOSITION. SPECIFICALLY DEVELOPED FOR HIGH QUALITY OPTICAL APPLICATIONS INCLUDING HIGH REFLECTIVE AND ANTI-REFLECTIVE COATINGS. COMES WITH STANDARD CHAMBER WHICH IS IDEAL FOR DEPOSITION ON UP TO 200MM WAFER SIZE AND WITH ETCH PROCESS OPTIMISED FOR UP TO 100MM WAFER SIZE. OR LARGE CHAMBER WHICH IS DESIGNED TO PROCESS WAFERS UP TO 200MM FOR BOTH ETCH AND DEPOSITION. SUBSTRATE ROTATION SPEED UP TO 20 RPM, TILT ANGLE -90 DEGREE HORIZONTAL TO 60 DEGREE FACING DOWN. PLATEN TEMPERATURE 5 TO 300 CENTIGRADE.