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DIODES THAT INCORPORATE A CRYSTAL OSCILLATOR THAT ARE LOW JITTER, AND HAS QUARTZ CRYSTAL RESONATOR TECHNOLOGY, WHICH ALSO INCORPORATE CLOCK INTEGRATED CIRCUIT TECHNOLOGY. THIS DEVICE IS AVAILABLE WITH COMPLEMENTARY METAL OXIDE SEMICONDUCTOR/TRANSISTOR-TRANSISTOR LOGIC, LOW VOLTAGE POSITIVE EMITTER COUPLED LOGICL, OR LOW VOLTAGE DIFFERENTIAL SIGNALLING OUTPUT LOGIC. THE DEVISE CAN BE USED FOR A VARIETY OF APPLICATIONS, INCLUDING WIFI, WIMAX, PASSIVE OPTICAL NETWORK AND TELECOMMUNICATION SYSTEMS LIKE SYNCHRONOUS OPTICAL NETWORKING/SYNCHRONOUS DIGITAL HIERARCHY. THE DIODE/PERICOM CRYSTAL CLOCK OSCILLATOR COMPRISE A PIEZOELECTRIC CRYSTAL AND A SILICON BASED INTEGRATED CIRCUIT WHICH FUNCTIONS AS A RESONATOR. ALL COMPONENTS ARE PACKAGED IN A CERAMIC HOUSING.

AN INTEGRATED CIRCUIT WITH MEMORY OF 32 MBITS. THIS DEVICE IS AN ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY WHICH REMAINS STABLE WHEN IS POWER IS REMOVED THE INTEGRATED CIRCUIT HAS A 1.8V SUPPLY VOLTAGE, WITH A SERIAL OR PARALLEL FIELD-PROGRAMMABLE GATE ARRAY CONFIGURATION INTERFACE THE INTEGRATED CIRCUIT ALSO FEATURES A LOW-POWER ADVANCED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR NOR FLASH PROCESS

AN INTEGRATED CIRCUIT WHICH HAS THE FUNCTION OF A FIELD PROGRAMMABLE GATE ARRAY. THE FIELD PROGRAMMABLE GATE ARRAY IS A SEMICONDUCTOR DEVICE CONSISTING OF A MATRIX OF CONFIGURABLE LOGIC BLOCKS CONNECTED THROUGH PROGRAMMABLE INTERCONNECTS. THIS DEVICE HAS MORE THAN ONE SILICON ELEMENT. COMBINED IN A SINGLE LEAD FRAME.

ELECTRONIC INTEGRATED CIRCUIT OF 32MBITS CAPACITY WITH A PROGRAMMABLE READ ONLY MEMORY. HAS A 1.8V SUPPLY VOLTAGE AND A SERIAL OR PARALLEL FPGA CONFIGURATION INTERFACE. THE DEVICE HAS A BUILT IN DATA DECOMPRESSOR AND HAS REPROGRAMMABLE METHOD FOR STORING LONGER OR MULTIPLE BIT STREAMS.

THE PRODUCT IS AN ELECTRONIC COMPONENT CALLED A SIP (SYSTEM-IN-PACKAGE) COMPONENT. THESE SIP COMPONENTS ARE COMPOSED OF COMMERCIAL MEMORIES STACKED VERTICALLY AND ENCASED IN A HARD PLASTIC COMPOUND. SUCH COMPONENTS ARE VERY ROBUST WHEN EXPOSED TO VIBRATIONS, SHOCKS AND TEMPERATURE CHANGES. THIS MAKES THEM SUITABLE FOR HARSH ENVIRONMENTS SUCH AS AEROSPACE AND SPACE. THESE SIP COMPONENTS USE COMMERCIAL SRAM, FLASH, MRAM, EEPROM, ...ETC STACKED VERTICALLY. THESE PRODUCTS CAN BE CONSIDERED AS MULTI-COMPONENT INTEGRATED CIRCUITS BECAUSE OF THEIR CONSTRUCTION FROM MULTIPLE MEMORY PARTS.