Customs Search

ONE-TIME PROGRAMMABLE READ ONLY MEMORY WITH A 16 MB (MEGA BITES) CAPACITY DESIGNED TO STORE CONFIGURATION BITSTREAMS OF FPGA DEVICES.

THE PRODUCT IS AN ELECTRONIC COMPONENT CALLED A SIP (SYSTEM-IN-PACKAGE) COMPONENT. THESE SIP COMPONENTS ARE COMPOSED OF COMMERCIAL MEMORIES STACKED VERTICALLY AND ENCASED IN A HARD PLASTIC COMPOUND. SUCH COMPONENTS ARE VERY ROBUST WHEN EXPOSED TO VIBRATIONS, SHOCKS AND TEMPERATURE CHANGES. THIS MAKES THEM SUITABLE FOR HARSH ENVIRONMENTS SUCH AS AEROSPACE AND SPACE. THESE SIP COMPONENTS USE COMMERCIAL SRAM, FLASH, MRAM, EEPROM, ...ETC STACKED VERTICALLY. THESE PRODUCTS CAN BE CONSIDERED AS MULTI-COMPONENT INTEGRATED CIRCUITS BECAUSE OF THEIR CONSTRUCTION FROM MULTIPLE MEMORY PARTS.

AN INTEGRATED CIRCUIT CHIP CONTAINING A MICROPROCESSOR (SPARC) AND ASSOCIATED FUNCTIONS (E.G NETWORK, MEMORY CONTROLLER ETC.) THIS CHIP IS A HIGH RELIABILITY CHIP USED IN THE SPACE AND AEROSPACE INDUSTRIES. THE PRODUCT IS CONSIDERED TO BE A MULTI-COMPONENT INTEGRATED CIRCUIT (MCO) MEMORY.

D-RAM-DYNAMIC RANDOM ACCESS MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY. IT IS FOR USE IN A COMPUTER AND HAS STORAGE CAPACITY OF BETWEEN 4MB TO 16MB.

AN INTEGRATED CIRCUIT WITH MEMORY OF 32 MBITS. THIS DEVICE IS AN ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY WHICH REMAINS STABLE WHEN IS POWER IS REMOVED THE INTEGRATED CIRCUIT HAS A 1.8V SUPPLY VOLTAGE, WITH A SERIAL OR PARALLEL FIELD-PROGRAMMABLE GATE ARRAY CONFIGURATION INTERFACE THE INTEGRATED CIRCUIT ALSO FEATURES A LOW-POWER ADVANCED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR NOR FLASH PROCESS