UNPACKAGED INFRA-RED SEMICONDUCTOR LIGHT EMITTING DIODE (LED) CHIP WITH A NOMINAL EMISSION WAVELENGTH OF 660NM. CHIP SIZE 11MIL X 11MIL AND IS MADE OF AlGaAs (ALUMINIUM GALLIUM ARSENIDE).

CLASSIFICATION HAS BEEN DETERMINED IN ACCORDANCE WITH THE FOLLOWING:- GENERAL INTERPRETATIVE RULES (GIR)S: GIR 1 HAS BEEN USED TO CLASSIFY THIS PRODUCT BY THE TERMS OF HEADING 8541 FOR DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES; MOUNTED PIEZOELECTRIC CRYSTALS. GIR 6 HAS BEEN USED TO CLASSIFY THE GOODS TO SUBHEADING LEVEL 854140 FOR PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES. CN CODE 85414010 FOR LIGHT-EMITTING DIODES, INCLUDING LASER DIODES. ALSO CLASSIFIED IN ACCORDANCE WITH: CHAPTER 85 NOTE 9 (A) REFERS HARMONISED SYSTEM EXPLANATORY NOTES (HSENS) TO 8541 (C) REFERS. EC REGULATION NO: 1037/2014 REFERS.