INDIUM PHOSPHIDE SUBSTRATES (WAFER FORM). THE SUBSTRATES ARE GROWN FROM A SINGLE CRYSTAL CYLINDER OF INDIUM PHOSPHIDE MATERIAL WHICH IS THEN CUT INTO SLICES (SUBSTRATES) AND THE SLICES ARE POLISHED. THE COMPOUND IS DOPED WITH IRON OR SULPHUR. EPITAXIAL LAYERS WILL BE GROWN ON THE SUBSTRATES TO CREATE EPITAXIAL WAFERS FOR USE IN THE ELECTRONICS INDUSTRY.

CLASSIFICATION IS DETERMINED ACCORDING TO GIRS 1 AND 6. CN 381800 90 FOR CHEMICAL ELEMENTS DOPED FOR ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR ELECTRONICS. OTHER THAN DOPED SILICON.