A METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION REACTOR BASED UPON CLOSED COUPLED SHOWERHEAD CONCEPT. INITIALLY DEVELOPED FOR GROWTH OF INP AND GAAS BASED MATERIALS. IT PROVIDES SUSCEPTOR- SUBSTRATE OPTIONSFOR BOTJ INP (INDIUM PHOSPHIDE) AND GAAS GAN (GALIUM NITRATE) THE REACTOR DESIGN IS BASED ON THE STAGNANT POINT CONCEPT. REAGENTS ENTER THE STAINLES STEEL, QUARTZ LINED REACTOR CHAMBER THROUGH A WATER COOLED SHOWERHEAD, CLOSE TO THE SAPPHIRRE SUBSTRATES. THE SHOWERHEAD HAS SEPARATE INJECTION FOR NH3 AND TMGA. THE SUBSTRATES ARE PLACED ON THE TOP SURFACE OF A ROTATING SUSCEPTOR WHICH IS RESISTIVELY HEATED. THE THREE ZONE HEATER ENABLES AN APPROPRIATE TEMPRATURE PROFILE TO BE SET UP ACROSS THE SUSCEPTOR FOR OPTIMISM OF UNIFORMITY. THE PROFILE IS MONITORED THROUGH OPTICAL PYROMETER PORTS THROUGH THE SHOWERHEAD.GROWTH OF TEMPERATURE IS CONTROLLED FROM A TRANSDUCER. GASES PASS AROUND SUSCEPTOR , PASSING THROUGH A FILTER TO PROTECT VACUUM FROM CONTAMINATION. REMOTELY OPERATED VIA COMPUTER . THIS PRODUCT IS A SYSTEM USED FOR DEPOSIT SEMI CONDUCTOR MATERIAL ONTO SUBSTRATES , NORMALLY DISCS OF CHRISTALLINE MATERIALS.

CLASSIFICATION HAS BEEN DETERMINED IN ACCORDANCE WITH THE FOLLOWING:- GENERAL INTERPRETATIVE RULES (GIR)S GIR 1 HAS BEEN USED TO CLASSIFY THIS PRODUCT BY THE TERMS OF HEADING 8486 - MACHINES AND APPARATUS OF A KIND USED SOLELY OR PRINCIPALLY FOR THE MANUFACTURE OF SEMICONDUCTOR BOULES OR WAFERS, SEMICONDUCTOR DEVICES, ELECTRONIC INTEGRATED CIRCUITS OR FLAT PANEL DISPLAYS; MACHINES AND APPARATUS SPECIFIED IN NOTE 9(C) TO THIS CHAPTER; PARTS AND ACCESSORIES GIR6 HAS BEEN USED TO CLASSIFY THE GOODS TO SUBHEADING LEVEL 848620 - MACHINES AND APPARATUS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES OR OF ELECTRONIC INTEGRATED CIRCUITS. CN CODE 84862000 - OTHER THAN MACHINE-TOOLS OPERATED BY ULTRASONIC PROCESSES ALSO CLASSIFIED IN ACCORDANCE WITH:- HARMONISED SYSTEM EXPLANATORY NOTE (B) (1) (b) HEADING 8486.