DOPED SILICON (SILICON IS DOPED WITH CARBITE SiC) IN THE FORM OF A TARGET FOR THE DEPOSITION ON SEMI CONDUCTOR WAFERS, APPROXIMATE DIAMETER 330MM, THICKNESS 3MM, DENSITY 2.3 - 2.7 G/CM3, PRODUCT IS IN DISC FORM.

CLASSIFICATION IS DETERMINED BY THE INTERPRETATION OF GENERAL RULES 1 AND 6 OF THE COMBINED NOMENCLATURE AND THE TERMS OF HEADING 3818 AND SUBHEADING 3818.00