A 3-kW DC POWER SUPPLY USED IN THE MANUFACTURE OF SEMICONDUCTORS. UNDER THE SPUTTERING PROCESS A SUBSTRATE (SILICON) IS BOMBARDED WITH IONS IN A VACUUM FLASK CONTAINING PLASMA. THE PLASMA IS A COMBINATION OF AN ELECTRICAL CURRENT AND AN INERT GAS. THIS PRODUCT PRODUCES THE ELECTRICAL CURRENT FOR THAT PURPOSE. THEY ARE DESIGNED FOR THIS PURPOSE ALONE. OUTPUT POWER - 3 kW. OUTPUT VOLTAGE - 370 TO 1000 VDC. INPUT POWER: LINE VOLTAGE - 400 VAC 10%; 3 oHI, 4 WIRE, 50 TO 60 Hz, NO NEUTRAL. DIMENSIONS - 87 MM (H) x 216 MM (W) x 517 MM (D)

CLASSIFICATION HAS BEEN DETERMINED IN ACCORDANCE WITH THE FOLLOWING:- GENERAL INTERPRETATIVE RULES (GIR)S GIR 1 HAS BEEN USED TO CLASSIFY THE PRODUCT BY THE TERMS OF HEADING 8486 MACHINES AND APPARATUS OF A KIND USED SOLELY OR PRINCIPALLY FOR THE MANUFACTURE OF SEMICONDUCTOR BOULES OR WAFERS, SEMICONDUCTOR DEVICES, ELECTRONIC INTERGRATED CIRCUITS OR FLAT PANEL DISPLAYS; MACHINES AND APPARATUS SPECIFIED IN NOTE 9 (C) TO THIS CHAPTER; PARTS AND ACCESSORIES. GIR 6 HAS BEEN USED TO CLASSIFY THE GOODS TO SUBHEADING LEVEL 848620 MACHINES AND APPARATUS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES OR OF ELECTRONIC INTERGRATED CIRCUITS CN CODE 84862090 OTHER THAN MACHINE-TOOLS OPERATED BY ULTRASONIC PROCESSES ALSO CLASSIFED IN ACCORDANCE WITH: HSEN NOTE (B) TO HEADING 8486 CHAPTER NOTES 9 (C) AND (D) CHAPTER 84