A POWER MOSFET (METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR). WITH A DISSPATATION RATE OF MORE THAN 1 WATT. IN A 3 LEAD PACKAGE. PACKAGE APPROX LENGTH (NOT INCLUDING LEADS (21 MM) 0.82 INCH. APPLICATIONS INCLUDE RECTIFICATION FOR POWER SUPPLIES, ETC.

THE PRODUCT HAS BEEN CLASSIFIED IN ACCORDANCE WITH THE FOLLOWING:- GENERAL INTERPRETIVE RULES (GIRS) GIR 1 HAS BEEN USED TO CLASSIFY THIS PRODUCT BY THE TERMS OF HEADING 8541 DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMI CONDUCTOR DEVICES INCLUDING PHOTO VOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; GIR T6 HAS BEEN USED TO CLASSIFY THE PRODUCT TO SUBHEADING LEVEL 854129 TRANSISTORS, OTHER THAN PHOTSENSITIVE TRANSISTORS WITH A DISSIPATION RATE OF MORE THAN 1 W TARIC CODE 8541290000. ALSO CLASSIFIED IN ACCORDANCE WITH THE HSEN TO 8541 NOTE (A) (II) (2)