Électronique
Composants electroniques, y compris les circuits integres a usage general (microprocesseurs, FPGA, ADC, DAC), les composants a semi-conducteurs composes (GaAs, GaN, InP), les circuits integres durcis aux radiations, et les circuits integres neuromorphiques. Les seuils de controle portent sur la dose de radiation, la vitesse de traitement, le nombre de portes logiques et la frequence d'echantillonnage.
| Reference | Parametre | Seuil |
|---|---|---|
| 3A001.a.1 | total radiation dose | >= 5000 Gy(Si) |
| 3A001.a.1 | dose rate upset | >= 5e6 Gy(Si)/s |
| 3A001.a.1 | neutron fluence (1 MeV equiv) | >= 5e13 n/cm² |
| 3A001.a.2 | processing speed | >= 5 GFLOPS |
| 3A001.a.2 | ALU access width | >= 32 bit |
| 3A001.a.5 | ADC 8-9 bit sample rate | > 1300 MSPS |
| 3A001.a.5 | ADC 10-11 bit sample rate | > 600 MSPS |
| 3A001.a.5 | ADC 12-13 bit sample rate | > 400 MSPS |
| 3A001.a.5 | ADC 14-15 bit sample rate | > 250 MSPS |
| 3A001.a.5 | ADC 16+ bit sample rate | > 65 MSPS |
| 3A001.a.7 | FPLD equivalent gate count | > 700000 two-input gates |
| 3A001.a.7 | basic gate propagation delay time | < 0.02 ns |
| 3A001.a.11 | compound semiconductor gate count | > 3000 two-input gates |
| 3A001.b.2 | frequency range | > 2.7 GHz |
| 3A001.b.2 | fractional bandwidth | > 15 % |
| 3A001.b.2 | peak sat power (2.7-6.8 GHz) | > 500 W |
| 3A001.b.2 | peak sat power (6.8-31.8 GHz) | > 270 W |
| 3A001.b.2 | peak sat power (31.8-37.5 GHz) | > 200 W |
| 3A001.b.3 | operating frequency | > 31.8 GHz |
| 3A001.e | superconducting gate delay-power product | < 1e-14 J |
| 3A001.e | resonant circuit Q-value | > 10000 |
| 3A001.a.3 | a compound semiconductor and operating at a clock frequency | > 40 MHz |
| 3A001.a.5.a.1 | with a "sample rate" | > 13 Giga Samples |
| 3A001.a.5.a.1 | but | < 10 bit |
| 3A001.a.5.a.2 | with a "sample rate" | > 600 Mega Samples |
| 3A001.a.5.a.2 | but | < 12 bit |
| 3A001.a.5.a.3 | with a "sample rate" | > 400 MSPS |
| 3A001.a.5.a.3 | but | < 14 bit |
| 3A001.a.5.a.4 | with a "sample rate" | > 250 MSPS |
| 3A001.a.5.a.4 | but | < 16 bit |
| 3A001.a.5.a.5 | A resolution of 16 bit or more with a "sample rate" | > 65 MSPS |
| 3A001.a.5.b.1 | A resolution of 10 bit or more but | < 12 bit |
| 3A001.a.5.b.2.a.1 | A settling time | < 9 ns |
| 3A001.a.5.b.2.a.2 | A ‘Spurious Free Dynamic Range’ (SFDR) | > 68 dBc (carrier) |
| 3A001.a.10.b | A typical "basic gate propagation delay time" of | < 002 ns |
| 3A001.a.10.c | An operating frequency | > 3 GHz |
| 3A001.a.11.b | A toggle frequency | > 12 GHz |
| 3A001.a.13.a | but | < 12 bit |
| 3A001.a.14 | with a "sample rate" | > 13 Giga Samples |
| 3A001.a.14 | with a "sample rate" | > 10 GSPS |
| 3A001.a.14 | with a "sample rate" | > 400 Mega Samples |
| 3A001.a.14 | or 5. A resolution of 16 bit or more with a "sample rate" | > 180 MSPS |
| 3A001.a.14 | but | < 10 bit |
| 3A001.a.14 | but | < 12 bit |
| 3A001.a.14 | but | < 14 bit |
| 3A001.a.14 | but | < 16 bit |
| 3A001.b.1.a.1 | Devices operating at frequencies | > 318 GHz |
| 3A001.b.1.a.2 | g a cathode heater with a turn on time to rated RF power of | < 3 seconds |
| 3A001.b.1.a.3 | h a "fractional bandwidth" of more than 7 % or a peak power | > 25 kW |
| 3A001.b.1.c | g an emission current density at rated operating conditions | > 5 A/cm |
| 3A001.b.1.c | n-continuous) current density at rated operating conditions | > 10 A/cm |
| 3A001.b.2.a | Rated for operation at frequencies | > 27 GHz up |
| 3A001.b.2.a.1 | 75 dBm) at any frequency | > 27 GHz up |
| 3A001.b.2.a.1 | A peak saturated power output | > 75 W ( |
| 3A001.b.2.a.2 | 4 dBm) at any frequency | > 29 GHz up |
| 3A001.b.2.a.2 | A peak saturated power output | > 55 W ( |
| 3A001.b.2.a.3 | ed power output greater than 40 W (46 dBm) at any frequency | > 32 GHz up |
| 3A001.b.2.a.3 | A peak saturated power output | > 40 W ( |
| 3A001.b.2.a.4 | ed power output greater than 20 W (43 dBm) at any frequency | > 37 GHz up |
| 3A001.b.2.a.4 | A peak saturated power output | > 20 W ( |
| 3A001.b.2.b | Rated for operation at frequencies | > 68 GHz up |
| 3A001.b.2.b.1 | ed power output greater than 10 W (40 dBm) at any frequency | > 68 GHz up |
| 3A001.b.2.b.1 | A peak saturated power output | > 10 W ( |
| 3A001.b.2.b.2 | ted power output greater than 5 W (37 dBm) at any frequency | > 85 GHz up |
| 3A001.b.2.b.2 | A peak saturated power output | > 5 W ( |
| 3A001.b.2.c | 77 dBm) at any frequency | > 16 GHz up |
| 3A001.b.2.c | Rated for operation with a peak saturated power output | > 3 W ( |
| 3A001.b.2.d | 1 nW (– 70 dBm) at any frequency | > 318 GHz up |
| 3A001.b.2.d | Rated for operation with a peak saturated power output | > 01 nW ( |
| 3A001.b.2.e | ted power output greater than 1 W (30 dBm) at any frequency | > 37 GHz up |
| 3A001.b.2.e | Rated for operation with a peak saturated power output | > 1 W ( |
| 3A001.b.2.f | 62 mW (15 dBm) at any frequency | > 435 GHz up |
| 3A001.b.2.f | Rated for operation with a peak saturated power output | > 3162 mW ( |
| 3A001.b.2.g | d power output greater than 10 mW (10 dBm) at any frequency | > 75 GHz up |
| 3A001.b.2.g | Rated for operation with a peak saturated power output | > 10 mW ( |
| 3A001.b.2.h | 1 nW (– 70 dBm) at any frequency | > 90 GHz |
| 3A001.b.2.h | Rated for operation with a peak saturated power output | > 01 nW ( |
| 3A001.b.3.a | Rated for operation at frequencies | > 27 GHz up |
| 3A001.b.3.a.1 | d power output greater than 400 W (56 dBm) at any frequency | > 27 GHz up |
| 3A001.b.3.a.1 | A peak saturated power output | > 400 W ( |
| 3A001.b.3.a.2 | 12 dBm) at any frequency | > 29 GHz up |
| 3A001.b.3.a.2 | A peak saturated power output | > 205 W ( |
| 3A001.b.3.a.3 | 61 dBm) at any frequency | > 32 GHz up |
| 3A001.b.3.a.3 | A peak saturated power output | > 115 W ( |
| 3A001.b.3.a.4 | 78 dBm) at any frequency | > 37 GHz up |
| 3A001.b.3.a.4 | A peak saturated power output | > 60 W ( |
| 3A001.b.3.b | Rated for operation at frequencies | > 68 GHz up |
| 3A001.b.3.b.1 | ed power output greater than 50 W (47 dBm) at any frequency | > 68 GHz up |
| 3A001.b.3.b.1 | A peak saturated power output | > 50 W ( |
| 3A001.b.3.b.2 | 76 dBm) at any frequency | > 85 GHz up |
| 3A001.b.3.b.2 | A peak saturated power output | > 15 W ( |
| 3A001.b.3.b.3 | ed power output greater than 40 W (46 dBm) at any frequency | > 12 GHz up |
| 3A001.b.3.b.3 | A peak saturated power output | > 40 W ( |
| 3A001.b.3.b.4 | 45 dBm) at any frequency | > 16 GHz up |
| 3A001.b.3.b.4 | A peak saturated power output | > 7 W ( |
| 3A001.b.3.c | 5 W (27 dBm) at any frequency | > 318 GHz up |
| 3A001.b.3.c | Rated for operation with a peak saturated power output | > 05 W ( |
| 3A001.b.3.d | ted power output greater than 1 W (30 dBm) at any frequency | > 37 GHz up |
| 3A001.b.3.d | Rated for operation with a peak saturated power output | > 1 W ( |
| 3A001.b.3.e | 1 nW (– 70 dBm) at any frequency | > 435 GHz |
| 3A001.b.3.e | Rated for operation with a peak saturated power output | > 01 nW ( |
| 3A001.b.3.f | 0 dBm) at all frequencies | > 85 GHz up |
| 3A001.b.3.f | and rated for operation with a peak saturated power output | > 5 W ( |
| 3A001.b.4.a | Rated for operation at frequencies | > 27 GHz up |
| 3A001.b.4.a.1 | d power output greater than 500 W (57 dBm) at any frequency | > 27 GHz up |
| 3A001.b.4.a.1 | A peak saturated power output | > 500 W ( |
| 3A001.b.4.a.2 | 3 dBm) at any frequency | > 29 GHz up |
| 3A001.b.4.a.2 | A peak saturated power output | > 270 W ( |
| 3A001.b.4.a.3 | d power output greater than 200 W (53 dBm) at any frequency | > 32 GHz up |
| 3A001.b.4.a.3 | A peak saturated power output | > 200 W ( |
| 3A001.b.4.a.4 | 54 dBm) at any frequency | > 37 GHz up |
| 3A001.b.4.a.4 | A peak saturated power output | > 90 W ( |
| 3A001.b.4.b | Rated for operation at frequencies | > 68 GHz up |
| 3A001.b.4.b.1 | 45 dBm) at any frequency | > 68 GHz up |
| 3A001.b.4.b.1 | A peak saturated power output | > 70 W ( |
| 3A001.b.4.b.2 | ed power output greater than 50 W (47 dBm) at any frequency | > 85 GHz up |
| 3A001.b.4.b.2 | A peak saturated power output | > 50 W ( |
| 3A001.b.4.b.3 | 77 dBm) at any frequency | > 12 GHz up |
| 3A001.b.4.b.3 | A peak saturated power output | > 30 W ( |
| 3A001.b.4.b.4 | ed power output greater than 20 W (43 dBm) at any frequency | > 16 GHz up |
| 3A001.b.4.b.4 | A peak saturated power output | > 20 W ( |
| 3A001.b.4.c | 5 W (27 dBm) at any frequency | > 318 GHz up |
| 3A001.b.4.c | Rated for operation with a peak saturated power output | > 05 W ( |
| 3A001.b.4.d | ted power output greater than 2 W (33 dBm) at any frequency | > 37 GHz up |
| 3A001.b.4.d | Rated for operation with a peak saturated power output | > 2 W ( |
| 3A001.b.4.e | Rated for operation at frequencies | > 435 GHz and |
| 3A001.b.4.e.1 | 2 W (23 dBm) at any frequency | > 435 GHz up |
| 3A001.b.4.e.1 | A peak saturated power output | > 02 W ( |
| 3A001.b.4.e.2 | d power output greater than 20 mW (13 dBm) at any frequency | > 75 GHz up |
| 3A001.b.4.e.2 | A peak saturated power output | > 20 mW ( |
| 3A001.b.4.e.3 | 1 nW (– 70 dBm) at any frequency | > 90 GHz |
| 3A001.b.4.e.3 | A peak saturated power output | > 01 nW ( |
| 3A001.b.5 | 5:1 frequency band (fmax/fmin) in | < 10 μs |
| 3A001.b.7.b.2 | er than 100 mW (20 dBm) anywhere within the frequency range | > 435 GHz but |
| 3A001.b.7.b.2 | 5 GHz but not | > 110 GHz |
| 3A001.b.7.b.2 | To an output power | > 100 mW ( |
| 3A001.b.7.b.2 | 5 GHz but | <= 110 GHz |
| 3A001.b.7.c.2 | er than 100 mW (20 dBm) anywhere within the frequency range | > 435 GHz but |
| 3A001.b.7.c.2 | 5 GHz but not | > 110 GHz |
| 3A001.b.7.c.2 | To an output power | > 100 mW ( |
| 3A001.b.7.c.2 | 5 GHz but | <= 110 GHz |
| 3A001.b.8 | b. An average output power to mass ratio | > 80 W/kg |
| 3A001.b.8 | and c. A volume of | < 400 cm |
| 3A001.b.9 | and c. An "instantaneous bandwidth" | > 1 octave (fmax |
| 3A001.b.9 | an RF output power | > 100 W |
| 3A001.b.9 | or 2. A frequency | > 18 GHz |
| 3A001.b.9 | owing: a. A ‘turn-on time’ from off to fully operational in | < 10 seconds |
| 3A001.b.9 | 2fmin) and having any of the following: 1. For frequencies | < 18 GHz |
| 3A001.b.11.a | < 143 ps | |
| 3A001.b.11.b | Less than 100 μs for any frequency change | > 22 GHz within |
| 3A001.b.11.b | 2 GHz within the synthesised frequency range | > 48 GHz but |
| 3A001.b.11.b | 8 GHz but not | > 318 GHz |
| 3A001.b.11.b | < 100 μs | |
| 3A001.b.11.b | 8 GHz but | <= 318 GHz |
| 3A001.b.11.d | Less than 500 μs for any frequency change | > 550 MHz within |
| 3A001.b.11.d | ge exceeding 550 MHz within the synthesised frequency range | > 318 GHz but |
| 3A001.b.11.d | 8 GHz but not | > 37 GHz |
| 3A001.b.11.d | < 500 μs | |
| 3A001.b.11.d | 8 GHz but | <= 37 GHz |
| 3A001.b.11.e | Less than 100 μs for any frequency change | > 22 GHz within |
| 3A001.b.11.e | 2 GHz within the synthesised frequency range | > 37 GHz but |
| 3A001.b.11.e | in the synthesised frequency range exceeding 37 GHz but not | > 75 GHz |
| 3A001.b.11.e | < 100 μs | |
| 3A001.b.11.e | within the synthesised frequency range exceeding 37 GHz but | <= 75 GHz |
| 3A001.b.11.f | Less than 100 μs for any frequency change | > 50 GHz within |
| 3A001.b.11.f | 0 GHz within the synthesised frequency range | > 75 GHz but |
| 3A001.b.11.f | in the synthesised frequency range exceeding 75 GHz but not | > 90 GHz |
| 3A001.b.11.f | < 100 μs | |
| 3A001.b.11.f | within the synthesised frequency range exceeding 75 GHz but | <= 90 GHz |
| 3A001.b.11.g | Less than 1 ms within the synthesised frequency range | > 90 GHz |
| 3A001.b.11.g | < 1 ms | |
| 3A001.b.12 | > 50562 divided by | |
| 3A001.b.12 | c. Any planar side with length d (in cm) | < 15 divided |
| 3A001.c.1.a | A carrier frequency | > 6 GHz |
| 3A001.c.1.b | A carrier frequency | > 1 GHz |
| 3A001.c.1.b | but not | > 6 GHz and |
| 3A001.c.1.b | but | <= 6 GHz |
| 3A001.c.1.b.1 | A ‘frequency side-lobe rejection’ | > 65 dB |
| 3A001.c.1.b.3 | A bandwidth | > 250 MHz |
| 3A001.c.1.c.3 | A ‘frequency side-lobe rejection’ | > 65 dB and |
| 3A001.c.1.c.3 | quency side-lobe rejection’ exceeding 65 dB and a bandwidth | > 100 MHz |
| 3A001.c.2 | hich permit the direct processing of signals at frequencies | > 6 GHz |
| 3A001.e.1.a.1 | ‘Energy density’ | > 550 Wh/kg and |
| 3A001.e.1.a.1 | nsity’ exceeding 550 Wh/kg and a ‘continuous power density’ | > 50 W/kg |
| 3A001.e.1.a.2 | ‘Energy density’ | > 50 Wh/kg and |
| 3A001.e.1.a.2 | ensity’ exceeding 50 Wh/kg and a ‘continuous power density’ | > 350 W/kg |
| 3A001.e.1.b | ‘Secondary cells’ having an ‘energy density’ | > 350 Wh/kg at |
| 3A001.e.2.a | itors) and having all of the following: 1. A voltage rating | >= 5 kV |
| 3A001.e.2.a | 2. An energy density | >= 250 J/kg |
| 3A001.e.2.a | and 3. A total energy | >= 25 kJ |
| 3A001.e.2.a | Capacitors with a repetition rate of | < 10 Hz |
| 3A001.e.2.b | itors) and having all of the following: 1. A voltage rating | >= 5 kV |
| 3A001.e.2.b | 2. An energy density | >= 50 J/kg |
| 3A001.e.2.b | 3. A total energy | >= 100 J |
| 3A001.e.3 | of the following: a. Energy delivered during the discharge | > 10 kJ in |
| 3A001.f | input type absolute position encoders having an "accuracy" | < 10 second |
| 3A001.h | 2. Repetitive peak off-state voltage (blocking voltage) | > 300 V |
| 3A001.h | wing: 1. Rated for a maximum operating junction temperature | > 488 K ( |
| 3A001.h | and 3. Continuous current | > 1 A |
| 3A001.i.1 | A maximum operating frequency of more than 10 GHz but | < 20 GHz |
| 3A001.i.1 | an optical insertion loss | < 3 dB |
| 3A001.i.1.a | A ‘half-wave voltage’ (‘Vπ’) | < 27 V |
| 3A001.i.1.b | A ‘Vπ’ of | < 4 V |
| 3A001.i.2 | A maximum operating frequency equal to or | > 20 GHz |
| 3A001.i.2 | A maximum operating frequency | >= 20 GHz |
| 3A001.i.2 | an optical insertion loss | < 3 dB |
| 3A001.i.2.a | A ‘Vπ’ | < 33 V |
| 3A001.i.2.b | A ‘Vπ’ | < 5 V |
3A001.aGeneral purpose integrated circuits, as follows:
3A001.a.1Integrated circuits designed or rated as radiation hardened to withstand any of the following: a. A total dose of 5 × 10³ Gy(Si) [5 × 10⁵ rad(Si)] or higher; b. A dose rate upset of 5 × 10⁶ Gy(Si)/s [5 × 10⁸ rad(Si)/s] or higher; c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10¹³ n/cm² or higher on silicon, or its equivalent for other materials
3A001.a.2Microprocessor microcircuits, microcomputer microcircuits, and microcontroller microcircuits having any of the following: a. A processing speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more
3A001.a.5Analog-to-digital converters (ADCs) having any of the following: a. A resolution of 8 bit or more, but less than 10 bit, with a sample rate greater than 1.3 Giga Samples Per Second (GSPS); b. A resolution of 10 bit or more, but less than 12 bit, with a sample rate greater than 600 Mega Samples Per Second (MSPS); c. A resolution of 12 bit or more, but less than 14 bit, with a sample rate greater than 400 MSPS; d. A resolution of 14 bit or more with a sample rate greater than 250 MSPS; e. A resolution of 16 bit or more with a sample rate greater than 65 MSPS
3A001.a.7Field Programmable Logic Devices having any of the following: a. An equivalent usable gate count of more than 700,000 (two-input gates); or b. A typical 'basic gate propagation delay time' of less than 0.02 ns
3A001.a.9Neural network integrated circuits
3A001.a.11Digital integrated circuits based on any compound semiconductor and having an equivalent gate count of more than 3,000 (two-input gates)
3A001.bMicrowave or millimetre wave items, as follows:
3A001.b.2Microwave solid-state amplifiers and microwave solid state 'electronic assemblies'/'modules', having any of the following: a. An operating frequency exceeding 2.7 GHz and a 'fractional bandwidth' of more than 15% with any of the following: 1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2.7 GHz up to and including 6.8 GHz; 2. A peak saturated power output greater than 270 W (54.3 dBm) at any frequency exceeding 6.8 GHz up to and including 31.8 GHz; 3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 31.8 GHz up to and including 37.5 GHz
3A001.b.3Microwave transistors rated for operation above 31.8 GHz
3A001.b.12Monolithic Microwave Integrated Circuit (MMIC) transmit/receive modules
3A001.eElectronic devices and circuits containing components manufactured from 'superconductive' materials, specially designed for operation at temperatures below the 'critical temperature' of at least one of the 'superconductive' constituents, having any of the following: 1. Current switching for digital circuits using 'superconductive' gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10⁻¹´ J; or 2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000
3A001.a.1Integrated circuits designed or rated as radiation hardened to withstand any of the following:
3A001.a.1.aA total dose of 5 × 10^3 Gy (silicon) or higher;
3A001.a.1.bA dose rate upset of 5 × 10^6 Gy (silicon)/s or higher; or
3A001.a.1.cA fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10^13 n/cm^2 or higher on silicon, or its equivalent for other materials;
3A001.a.2"Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitised data, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or ‘non-volatile memories’, having any of the following:
3A001.a.2.aRated for operation at an ambient temperature above 398 K (125 °C);
3A001.a.2.bRated for operation at an ambient temperature below 218 K (– 55 °C); or
3A001.a.2.cRated for operation over the entire ambient temperature range from 218 K (– 55 °C) to 398 K (125 °C);
3A001.a.3"Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;
3A001.a.4Not used;
3A001.a.5Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:
3A001.a.5.aADCs having any of the following:
3A001.a.5.a.1A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS);
3A001.a.5.a.2A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS);
3A001.a.5.a.3A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS;
3A001.a.5.a.4A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or
3A001.a.5.a.5A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS;
3A001.a.5.bDigital-to-Analogue Converters (DAC) having any of the following:
3A001.a.5.b.1A resolution of 10 bit or more but less than 12 bit, with an ‘adjusted update rate’ exceeding 3 500 MSPS; or
3A001.a.5.b.2A resolution of 12 bit or more and having any of the following:
3A001.a.5.b.2.aAn ‘adjusted update rate’ exceeding 1 250 MSPS but not exceeding 3 500 MSPS, and having any of the following:
3A001.a.5.b.2.a.1A settling time less than 9 ns to arrive at or within 0,024 % of full scale from a full scale step; or
3A001.a.5.b.2.a.2A ‘Spurious Free Dynamic Range’ (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz; or
3A001.a.5.b.2.bAn ‘adjusted update rate’ exceeding 3 500 MSPS;
3A001.a.6Electro-optical and "optical integrated circuits", designed for "signal processing" and having all of the following: a. One or more than one internal "laser" diode; b. One or more than one internal light detecting element; and c. Optical waveguides;
3A001.a.7Field programmable logic devices having any of the following:
3A001.a.7.aA maximum number of single-ended digital input/outputs of greater than 700; or
3A001.a.7.bAn ‘aggregate one-way peak serial transceiver data rate’ of 500 Gb/s or greater;
3A001.a.8Not used;
3A001.a.9Neural network integrated circuits;
3A001.a.10Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
3A001.a.10.aMore than 1 500 terminals;
3A001.a.10.bA typical "basic gate propagation delay time" of less than 0,02 ns; or
3A001.a.10.cAn operating frequency exceeding 3 GHz;
3A001.a.11Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:
3A001.a.11.aAn equivalent gate count of more than 3 000 (2 input gates); or
3A001.a.11.bA toggle frequency exceeding 1,2 GHz;
3A001.a.12Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20 480 ms, where N is the number of points;
3A001.a.13Direct Digital Synthesizer (DDS) integrated circuits having any of the following:
3A001.a.13.aA Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or
3A001.a.13.bA DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more;
3A001.a.14Integrated circuits that perform or are programmable to perform all of the following: a. Analogue-to-digital conversions meeting any of the following: 1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS); 2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1,0 GSPS; 3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1,0 GSPS; 4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or 5. A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and b. Any of the following: 1. Storage of digitised data; or 2. Processing of digitised data;
3A001.b.1"Vacuum electronic devices" and cathodes, as follows:
3A001.b.1.aTravelling-wave "vacuum electronic devices", pulsed or continuous wave, as follows:
3A001.b.1.a.1Devices operating at frequencies exceeding 31,8 GHz;
3A001.b.1.a.2Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds;
3A001.b.1.a.3Coupled cavity devices, or derivatives thereof, with a "fractional bandwidth" of more than 7 % or a peak power exceeding 2,5 kW;
3A001.b.1.a.4Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following:
3A001.b.1.a.4.aAn "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;
3A001.b.1.a.4.bAn "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1;
3A001.b.1.a.4.cBeing "space-qualified"; or
3A001.b.1.a.4.dHaving a gridded electron gun;
3A001.b.1.a.5Devices with a "fractional bandwidth" greater than or equal to 10 %, with any of the following:
3A001.b.1.a.5.aAn annular electron beam;
3A001.b.1.a.5.bA non-axisymmetric electron beam; or
3A001.b.1.a.5.cMultiple electron beams;
3A001.b.1.bCrossed-field amplifier "vacuum electronic devices" with a gain of more than 17 dB;
3A001.b.1.cThermionic cathodes designed for "vacuum electronic devices" producing an emission current density at rated operating conditions exceeding 5 A/cm^2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm^2;
3A001.b.1.d"Vacuum electronic devices" with the capability to operate in a ‘dual mode’.
3A001.b.2"Monolithic Microwave Integrated Circuits" ("MMIC") amplifiers that are any of the following:
3A001.b.2.aRated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:
3A001.b.2.a.1A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;
3A001.b.2.a.2A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;
3A001.b.2.a.3A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or
3A001.b.2.a.4A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;
3A001.b.2.bRated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:
3A001.b.2.b.1A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or
3A001.b.2.b.2A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;
3A001.b.2.cRated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %;
3A001.b.2.dRated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;
3A001.b.2.eRated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;
3A001.b.2.fRated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;
3A001.b.2.gRated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or
3A001.b.2.hRated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz;
3A001.b.3Discrete microwave transistors that are any of the following:
3A001.b.3.aRated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following:
3A001.b.3.a.1A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;
3A001.b.3.a.2A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;
3A001.b.3.a.3A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or
3A001.b.3.a.4A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;
3A001.b.3.bRated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following:
3A001.b.3.b.1A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;
3A001.b.3.b.2A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;
3A001.b.3.b.3A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or
3A001.b.3.b.4A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;
3A001.b.3.cRated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;
3A001.b.3.dRated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz;
3A001.b.3.eRated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 43,5 GHz; or
3A001.b.3.fOther than those specified in 3A001.b.3.a. to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37,0 dBm) at all frequencies exceeding 8,5 GHz up to and including 31,8 GHz;
3A001.b.4Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following:
3A001.b.4.aRated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:
3A001.b.4.a.1A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;
3A001.b.4.a.2A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;
3A001.b.4.a.3A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or
3A001.b.4.a.4A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;
3A001.b.4.bRated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:
3A001.b.4.b.1A peak saturated power output greater than 70 W (48,45 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;
3A001.b.4.b.2A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;
3A001.b.4.b.3A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or
3A001.b.4.b.4A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;
3A001.b.4.cRated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;
3A001.b.4.dRated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;
3A001.b.4.eRated for operation at frequencies exceeding 43,5 GHz and having any of the following:
3A001.b.4.e.1A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;
3A001.b.4.e.2A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or
3A001.b.4.e.3A peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; or
3A001.b.4.fNot used
3A001.b.5Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following:
3A001.b.5.aA band-pass bandwidth of more than 0,5 % of centre frequency; or
3A001.b.5.bA band-stop bandwidth of less than 0,5 % of centre frequency;
3A001.b.6Not used;
3A001.b.7Converters and harmonic mixers that are any of the following:
3A001.b.7.aDesigned to extend the frequency range of "signal analysers" beyond 110 GHz;
3A001.b.7.bDesigned to extend the operating range of signal generators as follows:
3A001.b.7.b.1Beyond 110 GHz;
3A001.b.7.b.2To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;
3A001.b.7.cDesigned to extend the operating range of network analysers as follows:
3A001.b.7.c.1Beyond 110 GHz;
3A001.b.7.c.2To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;
3A001.b.7.c.3Not used;
3A001.b.7.dDesigned to extend the frequency range of microwave test receivers beyond 110 GHz;
3A001.b.8Microwave power amplifiers containing "vacuum electronic devices" specified in 3A001.b.1. and having all of the following: a. Operating frequencies above 3 GHz; b. An average output power to mass ratio exceeding 80 W/kg; and c. A volume of less than 400 cm^3;
3A001.b.9Microwave power modules (MPM) consisting of, at least, a travelling wave "vacuum electronic device", a "monolithic microwave integrated circuit" ("MMIC") and an integrated electronic power conditioner and having all of the following: a. A ‘turn-on time’ from off to fully operational in less than 10 seconds; b. A volume less than the maximum rated power in Watts multiplied by 10 cm^3/W; and c. An "instantaneous bandwidth" greater than 1 octave (fmax > 2fmin) and having any of the following: 1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or 2. A frequency greater than 18 GHz;
3A001.b.10Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz;
3A001.b.11‘Frequency synthesiser’"electronic assemblies" having a "frequency switching time" as specified by any of the following:
3A001.b.11.aLess than 143 ps;
3A001.b.11.bLess than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;
3A001.b.11.cNot used;
3A001.b.11.dLess than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 37 GHz;
3A001.b.11.eLess than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 75 GHz;
3A001.b.11.fLess than 100 μs for any frequency change exceeding 5,0 GHz within the synthesised frequency range exceeding 75 GHz but not exceeding 90 GHz; or
3A001.b.11.gLess than 1 ms within the synthesised frequency range exceeding 90 GHz;
3A001.b.12‘Transmit/receive modules’, ‘transmit/receive MMICs’, ‘transmit modules’, and ‘transmit MMICs’, rated for operation at frequencies above 2,7 GHz and having all of the following: a. A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat>505,62 W*GHz^2/fGHz^2] for any channel; b. A "fractional bandwidth" of 5 % or greater for any channel; c. Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm*GHz*N/fGHz] where N is the number of transmit or transmit/receive channels; and d. An electronically variable phase shifter per channel.
3A001.cAcoustic wave devices as follows and specially designed components therefor:
3A001.c.1Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:
3A001.c.1.aA carrier frequency exceeding 6 GHz;
3A001.c.1.bA carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:
3A001.c.1.b.1A ‘frequency side-lobe rejection’ exceeding 65 dB;
3A001.c.1.b.2A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;
3A001.c.1.b.3A bandwidth greater than 250 MHz; or
3A001.c.1.b.4A dispersive delay of more than 10 μs; or
3A001.c.1.cA carrier frequency of 1 GHz or less and having any of the following:
3A001.c.1.c.1A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;
3A001.c.1.c.2A dispersive delay of more than 10 μs; or
3A001.c.1.c.3A ‘frequency side-lobe rejection’ exceeding 65 dB and a bandwidth greater than 100 MHz;
3A001.c.2Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;
3A001.c.3Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;
3A001.dElectronic devices and circuits containing components, manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:
3A001.d.1Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10^-14 J; or
3A001.d.2Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000;
3A001.e.1‘Cells’ as follows:
3A001.e.1.a‘Primary cells’ having any of the following at 20 °C;
3A001.e.1.a.1‘Energy density’ exceeding 550 Wh/kg and a ‘continuous power density’ exceeding 50 W/kg; or
3A001.e.1.a.2‘Energy density’ exceeding 50 Wh/kg and a ‘continuous power density’ exceeding 350 W/kg; or
3A001.e.1.b‘Secondary cells’ having an ‘energy density’ exceeding 350 Wh/kg at 20 °C;
3A001.e.2High energy storage capacitors as follows:
3A001.e.2.aCapacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 250 J/kg; and 3. A total energy equal to or more than 25 kJ;
3A001.e.2.bCapacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 50 J/kg; 3. A total energy equal to or more than 100 J; and 4. A charge/discharge cycle life equal to or more than 10 000;
3A001.e.3"Superconductive" electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: a. Energy delivered during the discharge exceeding 10 kJ in the first second; b. Inner diameter of the current carrying windings of more than 250 mm; and c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm^2;
3A001.e.4Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified", having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated ‘AM0’ illumination with an irradiance of 1 367 watts per square metre (W/m^2);
3A001.fRotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor;
3A001.gSolid-state pulsed power switching thyristor devices and ‘thyristor modules’, using either electrically, optically, or electron radiation controlled switch methods and having any of the following:
3A001.g.1A maximum turn-on current rate of rise (di/dt) greater than 30 000 A/μs and off-state voltage greater than 1 100 V; or
3A001.g.2A maximum turn-on current rate of rise (di/dt) greater than 2 000 A/μs and having all of the following: a. An off-state peak voltage equal to or greater than 3 000 V; and b. A peak (surge) current equal to or greater than 3 000 A.
3A001.hSolid-state power semiconductor switches, diodes, or ‘modules’, having all of the following: 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and 3. Continuous current greater than 1 A.
3A001.iIntensity, amplitude, or phase electro-optic modulators, designed for analogue signals and having any of the following:
3A001.i.1A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
3A001.i.1.aA ‘half-wave voltage’ (‘Vπ’) less than 2,7 V when measured at a frequency of 1 GHz or below; or
3A001.i.1.bA ‘Vπ’ of less than 4 V when measured at a frequency of more than 1 GHz; or
3A001.i.2A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
3A001.i.2.aA ‘Vπ’ less than 3,3 V when measured at a frequency of 1 GHz or below; or
3A001.i.2.bA ‘Vπ’ less than 5 V when measured at a frequency of more than 1 GHz.
Note de decontrole
Les composants electroniques grand public (processeurs PC/smartphone courants) sont generalement sous les seuils. Les controles visent principalement les composants durcis aux radiations, les FPGA haute densite et les ADC ultra-rapides.
Note Générale sur la Technologie (NGT)
L'exportation de 'technologie' 'nécessaire' au 'développement', à la 'production' ou à l''utilisation' d'articles contrôlés dans les catégories 0 à 9 est contrôlée conformément aux dispositions de cha...
Note Générale sur les Logiciels (NGL)
Les Listes ne contrôlent pas les 'logiciels' qui sont : 1. Généralement accessibles au public du fait qu'ils sont : a. Vendus sans restriction à partir de points de vente au détail, par l'un des moyen...