3B001

Equipment designed for epitaxial growth as follows:

Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more;

Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, oxygen or nitrogen;

Molecular beam epitaxial growth equipment using gas or solid sources;

Equipment designed for ion implantation and having any of the following:

Not used;

Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;

Direct write capability;

A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or

Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater;

Not used;

Not used;

Automatic loading multi-chamber central wafer handling systems having all of the following: 1. Interfaces for wafer input and output, to which more than two functionally different ‘semiconductor process tools’ specified in 3B001.a.1., 3B001.a.2., 3B001.a.3. or 3B001.b. are designed to be connected; and 2. Designed to form an integrated system in a vacuum environment for ‘sequential multiple wafer processing’;

Lithography equipment as follows:

Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:

A light source wavelength shorter than 193 nm; or

Capable of producing a pattern with a ‘Minimum Resolvable Feature size’ (MRF) of 45 nm or less;

Imprint lithography equipment capable of producing features of 45 nm or less;

Equipment specially designed for mask making having all of the following: a. A deflected focussed electron beam, ion beam or "laser" beam; and b. Having any of the following: 1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or 2. Not used; 3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; 4. Equipment designed for device processing using direct writing methods, having all of the following: a. A deflected focused electron beam; and b.Having any of the following: 1. A minimum beam size equal to or smaller than 15 nm; or 2. An overlay error less than 27 nm (mean + 3 sigma);

Masks and reticles, designed for integrated circuits specified in 3A001;

Multi-layer masks with a phase shift layer not specified in 3B001.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;

Imprint lithography templates designed for integrated circuits specified in 3A001.

Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following: 1. Specially designed for ‘Extreme Ultraviolet’ (‘EUV’) lithography; and 2. Compliant with SEMI Standard P37.