3C002

Not used since 2012

All resists optimised for surface imaging technologies;

All resists designed or optimised for use with imprint lithography equipment specified in 3.B.1.f.2. that use either a thermal or photo-curable process.

Resists designed for semiconductor lithography as follows:

Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;

Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;

All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;