3E003

Substrates of diamond for electronic components;

Substrates of Silicon-on-Insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;

Substrates of silicon carbide for electronic components;

"Vacuum electronic devices" operating at frequencies of 31.8 GHz or higher;

Substrates of gallium oxide for electronic components.

Vacuum microelectronic devices;

Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;

"Superconductive" electronic devices;