6C004

Zinc selenide (ZnSe) and zinc sulphide (ZnS) "substrate blanks", produced by the chemical vapour deposition process and having any of the following:

A volume greater than 100 cm^3; or

A diameter greater than 80 mm and a thickness of 20 mm or more;

Electro-optic materials and non-linear optical materials, as follows:

Potassium titanyl arsenate (KTA) (CAS 59400-80-5);

Silver gallium selenide (AgGaSe2, also known as AGSE) (CAS 12002-67-4);

Thallium arsenic selenide (Tl3AsSe3, also known as TAS) (CAS 16142-89-5);

Zinc germanium phosphide (ZnGeP2, also known as ZGP, zinc germanium biphosphide or zinc germanium diphosphide); or

Gallium selenide (GaSe) (CAS 12024-11-2);

Non-linear optical materials, other than those specified in 6C004.b., having any of the following:

Having all of the following: a. Dynamic (also known as non-stationary) third order non-linear susceptibility (χ^(3), chi 3) of 10^–6 m^2/V^2 or more; and b. Response time of less than 1 ms; or

Second order non-linear susceptibility (χ^(2), chi 2) of 3,3×10^–11 m/V or more;

"Substrate blanks" of silicon carbide or beryllium beryllium (Be/Be) deposited materials, exceeding 300 mm in diameter or major axis length;

Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF4) (CAS 7783-64-4) and hafnium fluoride (HfF4) (CAS 13709-52-9) and having all of the following: 1. A hydroxyl ion (OH-) concentration of less than 5 ppm; 2. Integrated metallic purity levels of less than 1 ppm; and 3. High homogeneity (index of refraction variance) less than 5 × 10^–6;

Synthetically produced diamond material with an absorption of less than 10^–5 cm^–1 for wavelengths exceeding 200 nm but not exceeding 14 000 nm.